PART |
Description |
Maker |
NE6500496 |
4 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 4 W L S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC[NEC]
|
FHX06X FHX04X FHX05X |
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET GaAs FET & HEMT Chips
|
Eudyna Devices Inc Fujitsu Media Devices Limited
|
MGF0910A 0910A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET L S BAND POWER GaAs FET From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC39V3742A04 MGFC39V3742A |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET 3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
3SK241 |
GaAs N-Channel MES FET
|
Panasonic Semiconductor
|
MGF0905A MGF0905 0905A |
MINIATURE POWER RELAY L /S BAND POWER GaAs FET L,S BAND POWER GaAs FET LS BAND POWER GaAs FET From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
NE900275 |
KU BAND, GaAs, N-CHANNEL, RF POWER, FET
|
|
3SK166 3SK166A 3SK166A-0 3SK166A-2 |
GaAs N-channel Dual Gate MES FET GaAs N-channel Dual Gate MES FET 砷化镓N沟道双栅场效应晶体管
|
Sony Corporation Sony, Corp.
|
SGM2014AN SGM2014 |
GaAs N-channel Dual Gate MES FET GaAs N-channel Dual Gate MES FET
|
SONY[Sony Corporation]
|
FLL2400IU-2C |
L-Band High Power GaAs FET L BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
Fujitsu Limited Sumitomo Electric Industries, Ltd.
|
NE71300-N NE71300-M NE71300-L NE713 NE71383B |
L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
|
NEC[NEC]
|
NE3520S03 NE3520S03-T1C NE3520S03-T1D |
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
|
Renesas Electronics Corporation
|